| Manufacturer | Part # | Datasheet | Description |
 NXP Semiconductors |
PDTD123ET
|
68Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kW, R2 = 2.2 kW
Rev. 01-8 April 2005 |
|
PDTD123ET
|
131Kb / 10P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k廓, R2 = 2.2 k廓
Rev. 02-16 November 2009 |
 Nexperia B.V. All right... |
PDTD123ET
|
245Kb / 11P |
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 02 - 16 November 2009 |
|
PDTD123ET
|
202Kb / 9P |
50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
20 September 2024 |
|
PDTD123ET-Q
|
202Kb / 9P |
50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ
20 September 2024 |